AT-41485 Datasheet, PDF (1/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Low Noise Silicon Bipolar Transistor

Up to 6 GHz Low Noise
Silicon␣ Bipolar Transistor
Technical Data
AT-41485
Features
• Low Noise Figure:
1.4 dB Typical at 1.0␣ GHz
1.7 dB Typical at 2.0␣ GHz
• High Associated Gain:
18.5 dB Typical at 1.0␣ GHz
13.5 dB Typical at 2.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f_T
Description
Hewlett-Packard’s AT-41485 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41485 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 14 emitter finger interdigi-
tated geometry yields an interme-
diate sized transistor with imped-
ances that are easy to match for
low noise and moderate power
applications. Applications include
use in wireless systems as an LNA,
gain stage, buffer, oscillator, and
mixer. An optimum noise match
near 50 Ω at 900 MHz, makes this
device easy to use as a low noise
amplifier.
85 Plastic Package
The AT-41485 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f_T Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8926E
4-124