AT-31011 Datasheet, PDF (4/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-31011, AT-31033 Typical Performance
15
20
12
16
10 mA
9
5 mA
12
6
2 mA
3
2 mA
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 8. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V_CE␣ = 5 V.
8
2 mA
4
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 9. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 5 V.
20
16
12
8
2 mA
4
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 10. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 5 V.
4
5 mA
2
0
2 mA
-2
-4
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 11. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V_CE␣ = 1 V.
20
20
16
5 mA
12
2 mA
8
4
16
5 mA
12
8
2 mA
4
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 12. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 1 V.
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 13. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 1 V.
25
2.5
20
2.0
Ga
15
1.5
10
1.0
NF
5
0.5
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 14. AT-31011 Noise Figure and
Associated Gain at V_CE␣ = 2.7 V,
I_C␣ =␣ 1␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
25
2.5
20
2.0
15
1.5
Ga
10
1.0
NF
5
0.5
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 15. AT-31033 Noise Figure and
Associated Gain at V_CE␣ = 2.7 V,
I_C␣ =␣ 1␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
0
IM3 (dBc)
IM5 (dBc)
IM7 (dBc)
-20
-40
-60
-80
-9
-6
-3
0
3
6
POWER PER TONE (dBm)
Figure 16. AT-31011 and AT-31033
Intermodulation Products vs. Output
Power at V_CE␣ = 2.7 V, I _C␣ = 10 mA,
900␣ MHz with Optimal Tuning.
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