AT-31011 Datasheet, PDF (3/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

Characterization Information, T_A = 25° C
Symbol
Parameters and Test Conditions
P_1dB
G_1dB
IP₃
|S₂₁|_E2
C_CB
Power at 1 dB Gain Compression (opt tuning)
V_CE = 2.7 V, I_C = 10 mA
f = 0.9 GHz
Gain at 1 dB Gain Compression (opt tuning)
V_CE = 2.7 V, I_C = 10 mA
f = 0.9 GHz
Output Third Order Intercept Point,
V_CE = 2.7 V, I_C = 10 mA (opt tuning)
f = 0.9 GHz
Gain in 50 Ω System; V_CE = 2.7 V, I_C = 1 mA
f = 0.9 GHz
Collector-Base Capacitance
V_CB = 3V, f = 1 MHz
Units
dBm
dB
dBm
dB
pF
AT-31011 AT-31033
Typ
Typ
9
9
15
13
20
20
10
9
0.04
0.04
2.5
AMPLIFIER NF
2
1.5
NF MIN.
1
0.5
1 mA
10 mA
0
0 0.5
1
1.5
2
2.5
FREQUENCY (GHz)
Figure 2. AT-31011 and AT-31033
Minimum Noise Figure and Amplifier
NF^[1] vs. Frequency and Current at
V_CE␣ =2.7 V.
25
20
10 mA
15
1 mA
10
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 3. AT-31011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V_CE␣ = 2.7 V.
25
20
10 mA
15
10
1 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 4. AT-31033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V_CE␣ = 2.7 V.
10
10 mA
8
5 mA
6
4
2 mA
2
2 mA
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
20
16
12
8
2 mA
4
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
16
12
8
4
2 mA
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 5. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V_CE␣ = 2.7 V.
Figure 6. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ =2.7 V.
Figure 7. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ =2.7 V.
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
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