AT-30511 Datasheet, PDF (4/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-30511, AT-30533 Typical Performance, continued
10
25
8
5 mA
6
4
2 mA
2
20
5 mA
15
2 mA
10
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 8. AT-30511 and AT-30533
Power at 1 dB Gain Compression vs.
Frequency and Current at V_CE␣ = 5 V.
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 9. AT-30511 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 5 V.
25
20
5 mA
15
10
2 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 10. AT-30533 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 5 V.
6
4
2
5 mA
0
2 mA
-2
-4
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 11. AT-30511 and AT-30533
Power at 1 dB Gain Compression vs.
Frequency and Current at V_CE␣ = 1 V.
25
25
20
5 mA
15
2 mA
10
20
5 mA
15
10
2 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 12. AT-30511 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 1 V.
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 13. AT-30533 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 1 V.
25
2.5
20
2.0
Ga
15
1.5
10
1.0
NF
5
0.5
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 14. AT-30511 Noise Figure and
Associated Gain at V_CE␣ = 2.7 V,
I_C␣ =␣ 1␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
25
2.5
20
2.0
15
Ga
1.5
10
1.0
NF
5
0.5
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 15. AT-30533 Noise Figure and
Associated Gain at V_CE␣ = 2.7 V,
I_C␣ =␣ 1␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
0
IM3 (dBc)
IM5 (dBc)
IM7 (dBc)
-20
-40
-60
-80
-9
-6
-3
0
3
6
POWER PER TONE (dBm)
Figure 16. AT-30511 and AT-30533
Intermodulation Products vs. Output
Power at V_CE␣ = 2 .7 V, I_C␣ = 10 mA,
900␣ MHz with Optimal Tuning.
4-26