AT-30511 Datasheet, PDF (3/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-30511, AT-30533 Characterization Information, T_A = 25°C
Symbol
Parameters and Test Conditions
Units
P_1dB
G_1dB
IP₃
|S₂₁|_E2
C_CB
Power at 1 dB Gain Compression (opt tuning)
V_CE = 2.7 V, I_C = 5 mA
f = 0.9 GHz
Gain at 1 dB Gain Compression (opt tuning)
V_CE = 2.7 V, I_C = 5 mA
f = 0.9 GHz
Output Third Order Intercept Point,
V_CE = 2.7 V, I_C = 5 mA (opt tuning)
f = 0.9 GHz
Gain in 50 Ω System; V_CE = 2.7 V, I_C = 1 mA
f = 0.9 GHz
Collector-Base Capacitance
V_CB = 3V, f = 1 MHz
dBm
dB
dBm
dB
pF
AT-30511 AT-30533
Typ
Typ
7
7
16.5
15
17
17
10
9
0.04
0.04
Typical Performance
2.5
25
25
2.0
AMPLIFIER NF
1.5
20
5 mA
15
20
5 mA
15
1.0 _{NF MIN.}
0.5
0
0
1 mA
5 mA
0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 2. AT-30511 and AT-30533
Minimum Noise Figure and Amplifier
NF^[1] vs. Frequency and Current at
V_CE␣ =2 .7 V.
10
10
1 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 3. AT-30511 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V_CE␣ = 2 .7 V.
25
10
1 mA
5
0
0
0.5 1.0 1.5
2
2.5
FREQUENCY (GHz)
Figure 4. AT-30533 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V_CE␣ = 2 .7 V.
25
8
5 mA
6
4
2 mA
2
20
5 mA
15
2 mA
10
5
20
5 mA
15
10
2 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 5. AT-30511 and AT-30533
Power at 1 dB Gain Compression vs.
Frequency and Current at V_CE␣ = 2.7 V.
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 6. AT-30511 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ =2.7 V.
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 7. AT-30533 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ =2.7 V.
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
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