HBAT-5400 Datasheet, PDF (3/8 Pages) Agilent(Hewlett-Packard) – High Performance Schottky Diode for Transient Suppression

3
Typical Performance
300
100
10
1
0.1
0.01
0
T_A = +75°C
T_A = +25°C
T_A = –25°C
0.1 0.2 0.3 0.4 0.5 0.6
V_F – FORWARD VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage at Temperature for
HBAT-5400 and HBAT-5402.
160 _{Max. safe junction temp.}
140
120
100
80
60
40
T_A = +75°C
20
T_A = +25°C
0
T_A = –25°C
0 100 200 300 400 500 600
I_F – FORWARD CURRENT (mA)
Figure 4. Junction Temperature vs.
Current as a Function of Heat Sink
Temperature for HBAT-540B, -540C,
-540E, and -540F.
Note: Data is calculated from SPICE
parameters.
500
100
10
1
0.1
0.01
0
T_A = +75°C
T_A = +25°C
T_A = –25°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
I_F – FORWARD CURRENT (mA)
Figure 2. Forward Current vs.
Forward Voltage at Temperature for
HBAT-540B, -540C, -540E, and -540F.
3.0
2.5
2.0
1.5
1.0
0
5
10
15
20
V_R – REVERSE VOLTAGE (V)
Figure 5. Total Capacitance vs.
Reverse Voltage.
160 _{Max. safe junction temp.}
140
120
100
80
60
40
T_A = +75°C
20
T_A = +25°C
0
T_A = –25°C
0
50 100 150 200 250
I_F – FORWARD CURRENT (mA)
Figure 3. Junction Temperature vs.
Current as a Function of Heat Sink
Temperature for HBAT-5400 and
HBAT-5402. Note: Data is calculated
from SPICE parameters.