HBAT-5400 Datasheet, PDF (2/8 Pages) Agilent(Hewlett-Packard) – High Performance Schottky Diode for Transient Suppression

2
Absolute Maximum Ratings, T_A= 25ºC
Symbol Parameter
Unit
Absolute Maximum^[1]
HBAT-5400/-5402 HBAT-540B/-540C
I_F
I_{F- peak}
P_T
P_INV
T_J
T_STG
θ _JC
DC Forward Current
Peak Surge Current (1µs pulse)
Total Power Dissipation
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance, junction to lead
mA
A
mW
V
°C
°C
°C/W
220
1.0
250
30
150
-65 to 150
500
430
1.0
825
30
150
-65 to 150
150
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
Linear and Non-linear SPICE Model^[2]
SPICE Parameters
0.08 pF
2 nH
R_S
SPICE model
Note:
2. To effectively model the packaged HBAT-540x
product, please refer to Application Note AN1124.
Parameter
BV
CJO
EG
IBV
IS
N
RS
PB
PT
M
Unit
V
pF
eV
A
A
Ω
V
Value
40
3.0
0.55
10E-4
1.0E-7
1.0
2.4
0.6
2
0.5
HBAT-540x DC Electrical Specifications, T_A = +25°C^[1]
Part Package
Number Marking Lead
HBAT- Code^[2] Code Configuration
Package
Maximum Minimum
Typical Maximum
Forward Breakdown Typical Series Eff. Carrier
Voltage Voltage Capacitance Resistance Lifetime
V_F (mV) V_BR (V)
C_T (pF)
R_S (Ω)
τ (ps)
-5400
0
SOT-23
V0
-540B
B
Single
SOT-323
800 ^[3]
(3-lead SC-70)
30 ^[4]
3.0 ^[5]
2.4
100 ^[6]
-5402
2
V2
-540C
C
Series
SOT-23
SOT-323
(3-lead SC-70)
-540E
V3
E
Common
SOT-323
Anode (3-lead SC-70)
Common
SOT-323
-540F
V4
F
Cathode (3-lead SC-70)
Notes:
1. T_A = +25°C, where T_A is defined to be the temperature at the package pins where contact is made to the circuit board.
2. Package marking code is laser marked.
3. I_F = 100 mA; 100% tested
4. I_F = 100 µA; 100% tested
5. V_F = 0; f =1 MHz
6. Measured with Karkauer method at 20 mA guaranteed by design.