AT-64023 Datasheet, PDF (3/4 Pages) Agilent(Hewlett-Packard) – Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64023 Typical Performance, T_A = 25°C
29
18
28
27
150 mA
110 mA
26
25
24
1.0
70 mA
2.0
3.0 4.0
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain
Compression vs. Frequency and
Collector Current. V_CE = 16 V.
15
12
150 mA
9
110 mA
70 mA
6
1.0
2.0
3.0 4.0
FREQUENCY (GHz)
Figure 2. 1 dB Compressed Gain vs.
Frequency and Collector Current.
V_CE= 16 V.
30
P_OUT
25
20
40
η_T
15
30
10
20
5
10
0
0
0 5 10 15 20 25
POWER IN (dBm)
Figure 3. Output Power and Efficiency
vs. Input Power.
V_CE = 16 V, I_C = 110mA, f = 4.0 GHz.
35
30
25
MSG
20
15
MAG
10
|S21E|²
5
0
0.1
0.3 0.5 1.0
3.0 5.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V_CE = 16 V, I_C = 110 mA.
Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 16 V,I_C␣ =␣ 110mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
S₁₂
S₂₂
dB
Mag. Ang. Mag. Ang.
0.1
.54 -124
28.2 25.71 135
-33.3 .022 42
.72
-51
0.5
.80 -178
17.6
7.57 78
-29.5 .034 18
.33 -119
1.0
.80 162
11.9
3.92 47
-28.6 .037 10
.33 -142
1.5
.80 147
8.6
2.70 21
-27.9 .040 12
.40 -156
2.0
.78 133
6.3
2.07 -4
-27.6
.042
1
.48 -169
2.5
.77 127
5.1
1.80 -24
-25.5 .053 -5
.58 -178
3.0
.73 116
3.8
1.56 -51
-25.0 .056 -20
.67 170
3.5
.66 106
2.9
1.40 -79
-25.8 .051 -28
.78 156
4.0
.60
99
2.2
1.28 -109
-27.2 .044 -49
.86 142
4.5
.55
98
1.4
1.18 -141
-31.2 .028 -70
.93 127
5.0
.54
99
0.6
1.07 -175
-40.9 .009 -144
.93 112
A model for this device is available in the DEVICE MODELS section.
S-parameters at other bias conditions are available on the Hewlett-Packard Design Pak disk.
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