AT-64023 Datasheet, PDF (2/4 Pages) Agilent(Hewlett-Packard) – Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64023 Absolute Maximum Ratings
Symbol
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation ^[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
W
°C
°C
Absolute
Maximum^[1]
2.2
40
20
200
3
200
-65 to 200
Thermal Resistance^[2,4]:
θ_jc = 40°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T_CASE = 25°C.
3. Derate at 25 mW/°C for T_C > 80°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θ_jc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
|S_21E|² Insertion Power Gain; V_CE = 16 V, I_C = 110 mA
f = 2.0 GHz dB
6.5
f = 4.0 GHz
2.0
P_{1 dB}
G_{1 dB}
Power Output @ 1 dB Gain Compression
V_CE = 16 V, I_C = 110 mA
1 dB Compressed Gain; V_CE = 16 V, I_C = 110 mA
f = 2.0 GHz dBm
27.5
f= 4.0 GHz
25.5 26.5
f = 2.0 GHz dB
12.5
f = 4.0 GHz
7.0 9.5
η_T
Total Efficiency^[1] at 1 dB Compression:
V_CE = 16 V, I_C = 110 mA
f = 4.0 GHz %
35.0
h_FE
Forward Current Transfer Ratio; V_CE = 8 V, I_C = 110 mA
I_CBO Collector Cutoff Current; V_CB = 16 V
I_EBO Emitter Cutoff Current; V_EB = 1 V
— 20
µA
µA
50 200
100
5.0
Note:
1. η_T = (RF Output Power)/(RF Input Power + V_CEI_C).
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