IAM-92516 Datasheet, PDF (2/8 Pages) Agilent(Hewlett-Packard) – High Linearity GaAs FET Mixer

IAM-92516 Absolute Maximum Ratings^[1]
Parameter
Device Voltage
CW RF Input Power^[2]
CW LO Input Power^[2]
Channel Temperature
Storage Temperature
Units
V
dBm
dBm
°C
°C
Absolute Max.
10
+30
20
150
-65 to 150
Thermal Resistance^[2,4]
θ_ch-c = 47.6°C/W
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Assuming DC quiescent conditions and
T_A = 25°C.
3. Board (package belly) temperature T_B is
25°C. Derate 21 mW/°C for T_B > 85°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Electrical Specifications
T_A = 25°C, DC =5V @ 26 mA, RF =1.91 GHz, Pin_RF = -10 dBm; LO =1.7 GHz, Pin_LO = -3 dBm, IF = 210 MHz unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.^[1]
F_RF
Frequency Range, RF
F_LO
Frequency Range, LO
F_IF
Frequency Range, IF
Id
Device Current
MHz
400
3500
MHz
400
3500
MHz
DC
300
mA
22
26
30
0.89
G_c[3]
IIP3^[2]
Conversion Loss
Input Third Order Intercept Point
dB
dBm
22
6
6.9
0.08
27
0.43
NF^[3]
SSB Noise Figure
dB
12.5
P1dB^[3]
Output Power at 1 dB Compression
dBm
9
RL_RF
RF Port Return Loss
dB
19
RL_LO
LO Port Return Loss
dB
24
RL_IF
IF Port Return Loss
dB
21
ISOL_L-R
LO-RF Isolation
dB
34
ISOL_L-I
LO-IF Isolation
dB
56
ISOL_R-L
RF-IF Isolation
dB
33
Notes:
1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of
this product and is intended to be used as an estimate for distribution of the typical specification.
2. IIP3 test condition: F_RF1 = 1.91 GHz, F_RF2 = 1.89 GHz with input power of -10 dBm per tone and LO power = -3 dBm at LO frequency F_LO= 1.7 GHz.
3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz.
Simplified Schematic
Figure 1. IAM-92516 Test Board.
2