AMMC-5618 Datasheet, PDF (2/8 Pages) Agilent(Hewlett-Packard) – 6 - 20 GHz Amplifier

AMMC-5618 DC Specifications / Physical Properties ^[1]
Symbol
Parameters and Test Conditions
Unit Min. Typical
V_D1,V_D2
Recommended Drain Supply Voltage
V
3
5
I_D1
First stage Drain Supply Current
(V _D1= 5V, V_G1 = Open or Ground)
mA
48
I_D2
Second stage Drain Supply Current
(V _D2= 5V, V_G2 = Open or Ground)
mA
59
I_D1 + I_D2
θ _ch-b
Total Drain Supply Current
(V_G1 = V_G2 = Open or Ground, V_D1= V_D2 = 5 V)
Thermal Resistance ^[2]
(Backside temperature (T_b) = 25°C
mA
107
°C/W
22
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (θ_ch-b) = 32°C/W at T_channel (T_c) = 150°C as measured using infrared microscopy.
Thermal Resistance at backside temperature (T_b) = 25°C calculated from measured data.
Max.
7
140
AMMC-5618 RF Specifications ^[3]
(Tb = 25°C, V_DD= 5 V, I_DD = 107 mA, Z₀ = 50 Ω.)
Symbol
|S₂₁|²
∆|S₂₁|²
RL_in
RL_out
|S₁₂|²
P_-1dB
P_sat
OIP3
∆S₂₁ / ∆T
NF
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power at 1dB Gain Compression @ 20 GHz
Saturated Output Power (3dB Gain Compression) @ 20 GHz
Output 3rd Order Intercept Point @ 20 GHz
Temperature Coefficient of Gain ^[2]
Noise Figure @ 20 GHz
Notes:
3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
4. Temperature Coefficient of Gain based on sample test
Unit Min.
dB
12.5
dB
dB
9
dB
9
dB
-40
dBm 17.5
dBm 19
dBm
dB/°C
dB
Typical
14.5
± 0.3
12
12
-45
19.5
20.5
26
-0.023
4.4
Max.
6.5
2