HMMC-1002 Datasheet, PDF (1/8 Pages) Agilent(Hewlett-Packard) – DC- 50 GHz Variable Attenuator

DC – 50 GHz Variable Attenuator
Technical Data
HMMC-1002
Features
• Specified Frequency Range:
DC -26.5 GHz
• Return Loss: 10 dB
• Minimum Attenuation:
2.0␣ dB
• Maximum Attenuation:
30.0␣ dB
Description
The HMMC-1002 is a monolithic,
voltage variable, GaAs IC attenua-
tor that operates from DC to
50␣ GHz. It is fabricated using
MWTC’s MMICB process which
features an MBE epitaxial layer,
backside ground vias, and FET
gate lengths of approximately
0.4␣ mm. The variable resistive
elements of the HMMC-1002 are
two 750 mm wide series FETs
and four 200 mm wide shunt
FETs. The distributed topology of
the HMMC-1002 minimizes the
parasitic effects of its series and
shunt FETs, allowing the
HMMC-1002 to exhibit a wide
dynamic range across its full
bandwidth. An on-chip DC
reference circuit may be used to
maintain optimum VSWR for any
attenuation setting or to improve
the attenuation versus voltage
linearity of the attenuator circuit.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
RF Pad Dimensions:
DC Pad Dimensions:
1470 x 610 µm (57.9 x 24.0 mils)
± 10µm (± 0.4mils)
127 ± 15 µm (5.0 ± 0.6 mils)
60 x 70 µm (2.4 x 2.8 mils), or larger
75 x 75 µm (3.0 x 3.0 mils), or larger
Absolute Maximum Ratings^[1]
Symbol Parameters/Conditions
Units Min. Max.
V_DC-RF
V₁
V₂
V_DC
P_in
T_mina
DC Voltage to RF Ports
V₁ Control Voltage
V₁ Control Voltage
DC In/DC Out
RF Input Power
Minimum Ambient
Operating Temperature
V
-0.6 +1.6
V
-5.0 +0.5
V
-5.0 +0.5
V
-0.6 +1.0
dBm
17
°C
-55
T_maxa
Maximum Ambient
Operating Temperature
°C
+125
T_STG
Storage Temperature
°C
-65 +165
T_max
Maximum Assembly Temp.
°C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
5965-5452E
7-12