IRLML5103 Datasheet, PDF (4/4 Pages) International Rectifier – Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)

IRLML5103
Plastic-Encapsulate Mosfets
1000
D = 0.50
100
0.20
0.10
0.05
10
0.02
0.01
P_DM
SINGLE PULSE
1
(THERMAL RESPONSE)
t₁
t₂
Notes:
1. Duty factor D = t1 / t 2
0.1
0.00001
0.0001
0.001
0.01
2. Peak T J = P DM x Z thJA + TA
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
‚
-
+
Circuit Layout Considerations
• Low Stray Inductance
ƒ
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
„
+

R_G
V_GS*
**
• dv/dt controlled by R_G
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
V_DD^*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[^VGS^=10V ] ***
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
[^VDD]
Ripple ≤ 5%
[I_SD]
*** V_GS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
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