IRLML5103 Datasheet, PDF (1/4 Pages) International Rectifier – Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)

IRLML5103
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
G
l Fast Switching
l Lead-Free
l Halogen-Free
l _{Marking: DK}
Plastic-Encapsulate Mosfets
Power MOSFET
D
V_DSS = -30V
R_DS(on) = 0.60Ω
S
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-0.76
-0.61
-4.8
540
4.3
± 20
-5.0
-55 to + 150
Units
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient „
Typ.
–––
Max.
230
Units
°C/W
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V V_GS = 0V, I_D = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.029 ––– V/°C Reference to 25°C, I_D = -1mA
R_DS(ON)
Static Drain-to-Source On-Resistance
––– ––– 0.60
––– ––– 1.0
Ω
V_GS = -10V, I_D = -0.60A ƒ
V_GS = -4.5V, I_D = -0.30A ƒ
V_GS(th)
Gate Threshold Voltage
-1.0 ––– ––– V V_DS = V_GS, I_D = -250µA
g_fs
Forward Transconductance
0.44 ––– ––– S V_DS = -10V, I_D = -0.30A
I_DSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
V_DS = -24V, V_GS = 0V
V_DS = -24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _nA V_GS = -20V
––– ––– 100
V_GS = 20V
Q_g
Total Gate Charge
––– 3.4 5.1
I_D = -0.60A
Q_gs
Gate-to-Source Charge
––– 0.52 0.78 nC V_DS = -24V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 1.1 1.7
V_GS = -10V, See Fig. 6 and 9 ƒ
t_d(on)
Turn-On Delay Time
––– 10 –––
V_DD = -15V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
––– 8.2 –––
––– 23 –––
ns
I_D = -0.60A
R_G = 6.2Ω
t_f
Fall Time
––– 16 –––
R_D = 25Ω, See Fig. 10 ƒ
C_iss
Input Capacitance
––– 75 –––
V_GS = 0V
C_oss
Output Capacitance
––– 37 ––– pF V_DS = -25V
C_rss
Reverse Transfer Capacitance
––– 18 –––
ƒ = 1.0MHz, See Fig. 5
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
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