SI2302 Datasheet, PDF (3/3 Pages) Micro Commercial Components – N-Channel Enhancement Mode Field Effect Transistor

SI2302 Typical Characteristics
1.3
V_DS=V_GS
1.2 ^ID^=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
5 _VDS=10V
I_D=3.6A
4
3
2
1
0
0
2
4
6
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
Plastic-Encapsulate Mosfets
V_GS=0V
10¹
10⁰
10^-1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
10¹
R_DS(ON)Limit
1ms
10ms
10⁰
100ms
1s
DC
10^-1
T_A=25 C
T_J=150 C
10^{-2 Single Pulse}
10^-1
10⁰
10¹
10²
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
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