SI2302 Datasheet, PDF (1/3 Pages) Micro Commercial Components – N-Channel Enhancement Mode Field Effect Transistor

Plastic-Encapsulate Mosfets
FEATURES
High dense cell design for extremely low R_DS(ON)
Rugged and reliable
Case Material: Molded Plastic.
Absolute Maximum Ratings (TA=25^oC, unless otherwise noted)
Parameter
Symbol Ratings Unit
Drain-Source Voltage
VDS
20
V
Gate-source Voltage
VGS
8
V
Drain Current (Continuous)
Drain Current (Pulsed) ^a
ID
3
A
IDM
10
A
Total Power Dissipation @TA=25oC
PD
1.25
W
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)^b
Tj, Tstg -55 to +150 °C
RθJA
100 °C/W
SI2302
N-Channel MOSFET
1.Gate
2.Source
3.Drain
SOT-23
D
G
Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics ^c
BV_DSS
V_GS = 0V, I_D = 10µA
20
I_DSS
V_DS = 20V, V_GS = 0V
I_GSSF
V_GS = 8V, V_DS = 0V
IGSSR
V_GS = -8V, V_DS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics ^d
V_GS(th)
V_GS = V_DS, I_D = 50µA
0.65
R_DS(on)
V_GS = 4.5V, I_D = 3.6A
V_GS = 2.5V, I_D = 3.1A
g_FS
V_DS = 5V, I_D = 3.6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^d
C_iss
V_DS = 10V, V_GS = 0V, f = 1.0
C_oss
MHz
C_rss
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DD = 10V, I_D = 3.6A, V_GS =
4.5V, R_GEN = 6Ω
S
Typ
Max Unit
V
1
µA
100
nA
-100
nA
1.2
V
55
72
mΩ
82
110
mΩ
8.5
S
237
pF
120
pF
45
pF
23
45
ns
11
30
ns
34
70
ns
36
70
ns
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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