IRLML6302 Datasheet, PDF (3/4 Pages) International Rectifier –

HEXFET Power MOSFET

Typical Characteristics
10
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
1
0.1
0.01
0.1
20µs PULSE WIDTH
-1.5V T_J = 25°C
A
1
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Plastic-Encapsulate Mosfets
10
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
1
IRLML6302
0.1
0.01
0.1
-1.5V
20µs PULSE WIDTH
T_J = 150°C
A
1
10
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
2.0
ID = -0.61A
1.5
1.0
0.1
0.5
0.01
1.5
V_DS = -10V
20µs PULSE WIDTH
A
2.0
2.5
3.0
3.5
4.0
4.5
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
180
V _GS = 0V,
f = 1MHz
160
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
140
Ciss
120
Coss
100
80
Crss
60
40
20
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.0
-60
V_GS = -4.5V
A
-40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
10
I _D = -0.61A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0.0
1.0
2.0
3.0
4.0
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
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