IRLML6302 Datasheet, PDF (1/4 Pages) International Rectifier –

HEXFET Power MOSFET

Plastic-Encapsulate Mosfets
FEATURES
l Generation V Technology
l Ultra Low On-Resistance
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
Power MOSFET
D
IRLML6302
P-Channel MOSFET
G
Electrical Characteristics (TA=25°C, unless otherwise noted)
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
1.Gate
2.Source
3.Drain
S
Max.
-0.78
-0.62
-4.9
540
4.3
± 12
-5.0
-55 to + 150
SOT-23
Units
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient „
Typ.
–––
Max.
230
Units
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO., LTD
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