D882 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors
D882 Typical Characteristics
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NOTE
1.Aluminum heat sink
of 1.0 mm thickness.
10
2.With no insulator film.
3.With silicon compound.
8
6
4
2
0
0
100cm ₂
25cm ₂
9cm ₂
Without _{heat sink}
50
100
150
Ta-Ambient Temperature -^o C
SAFE OPERATING AREAS
10 _{I C(pulse) MAX.(PW 10ms,Duty Cycle 50%)}
3
1
0.3
I C(DC) MAX.
10
1
ms
ms
DC
PW=100
(Single _{nonreLDpimeistiistteiipvdaetpiounlse)}
S/b _Limited
s
0.1
NOTE
0.03 ^{1.TC=25o C}
2.Curves must be derated
Iinearly with increase of
temperature and Duty Cycle.
0.01
1
3 6 10
30 60 100
VCE-Collector to Emitter Voltage-V
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
10
3
1 VBE(sat)
0.6
0.3
0.1
0.06
0.03
0.01
0.006
0.003
VCE(sat)
I C=10.IB
Pulse Test
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
I C-Collector Current-A
DERATING CURVES FOR ALL TYPES
100
80
60
40
20
S/b _Limited
0
50
100
150
Tc-Case Temperature -^oC
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
2.0
Pulse Test
1.6
10
9
8
1.2
7
6
5
0.8
4
0.4
32
I B=1mA
0
4
8
12 16
20
VCE-Collector to Emitte^or Voltage-V
1000
300
100
30
GAIN BANDWIDTH PRODUCT vs.
COLLCETOR CURRENT
VCE=5.0V
Forced air
cooling
(with heat sink)
10
3
1
0.01 0.03
0.1
0.3
1
I C-Collcetor Current-A
THERMAL RESISTANCE vs.
PULSE WIDTH
VCE=10V
I C=1.0A
30 _Duty=0.001
10
3
1
0.3
0.1 0.3 1 3 10 30 100 300 1000
PW-Pulse Width-mS
DC CURRENT GAIN, BASE TO EMITTER
VOLTAGE vs. COLLECTOR CURRENT
1000
300
h FE
100
60
30
VCE=2.0V
Pulse Test
3
10 _VBE
1
6
0.6
3
0.3
1
0.1
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
I C-Collector Current-A
INPUT AND OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
f=1.0MHz
I E=0(Cob)
300
I C=0(Cib)
Cib
100
60
30
Cob
10
6
3
1
3 6 10
30 60
VCB-Collector to Base Voltage-V
VEB-Emitter to Base Voltage-V
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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