D882 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors
FEATURES
Power dissipation
MARKING:882
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
40
V
V_CEO
30
V
V_EBO
6
V
I_C
3000
mA
P_C
1250
mW
T_J
150
Tstg
-55-150
D882 (NPN)
1. EMITTER
2. COLLECTO
3. BASE
TO-126
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V_CBO
IC = 100μA, IE=0
40
Collector-emitter breakdown voltage
V_CEO
IC = 10mA, IB=0
30
Emitter-base breakdown voltage
V_EBO
IE= 100μA, IC=0
5
Collector cut-off current
I_CBO
VCB= 40 V, IE=0
Collector cut-off current
I_CEO
VCE= 30 V, IB=0
Emitter cut-off current
I_EBO
VEB= 6 V, IC=0
DC current gain
h_FE
VCE= 2 V, IC= 1A
60
Collector-emitter saturation voltage
V_{CE (sat)} I_C= 2A, I_B= 0.2 A
Base-emitter saturation voltage
Transition frequency
V_{BE (sat)}
f_T
IC= 2A, IB= 0.2 A
VCE= 5V, IC=0.1A ,f =10MHz
Typ
90
Max
1
10
1
400
0.5
1.5
Unit
V
V
V
µA
µA
µA
V
V
MHz
CLASSIFICATION OF HFE
Ran
k
Rang
e
R
60-120
O
100-200
Y
160-320
GR
200-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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