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AO3403 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor
Plastic-Encapsulate Mosfets
AO3403
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(0N) Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
ID=-250 A, VGS=0V
-30
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
VDS=0V, VGS= ±12V
±100
VDS=VGS ID=-250 A
-0.6
-1
-1.4
VGS=-10V, VDS=-5V
-13
VGS=-10V, ID=-2.6A
88
115
TJ=125°C
143
200
VGS=-4.5V, ID=-2A
103
150
VGS=-2.5V, ID=-1A
139
200
VDS=-5V, ID=-2.6A
8
IS=-1A,VGS=0V
-0.78
-1
-1.5
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
260
315
37
20
4
8
12
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.9
7.2
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-2.6A
2.8
3.5
0.7
Qgd
Gate Drain Charge
1
tD(on)
Turn-On DelayTime
6
tr
Turn-On Rise Time
VGS=-10V, VDS=-15V,
3.5
tD(off)
Turn-Off DelayTime
RL=5.76 , RGEN=3
20
tf
Turn-Off Fall Time
5
trr
Body Diode Reverse Recovery Time
IF=-2.6A, dI/dt=100A/ us
11.5
15
Qrr
Body Diode Reverse Recovery Charge
IF=-2.6A, dI/dt=100A/ us
4.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Unit
V
uA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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