AO3403 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

Plastic-Encapsulate Mosfets
FEATURES
The AO3403 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
AO3403
P-Channel MOSFET
D
G
S
1.Gate
2.Source
3.Drain
SOT-23
Absolute Maximum Ratings (TA=25^oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
T_A=25°C
T =70°C
Pulsed Drain Current ^C
Power Dissipation ^B
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
ID
I_DM
P_D
T_J, T_STG
Maximum
-30
±12
-2.6
-2.2
-13
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A,D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ Max
70
90
100
125
63
80
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P1