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AO3402 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor
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Plastic-Encapsulate Mosfets
AO3402
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Unit
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250 A, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=55°C
1
uA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
100
nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250 A
0.6
1
1.4
V
ID(ON) On state drain current
VGS=4.5V, VDS=5V
10
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=4A
TJ=125°C
45
55
mΩ
66
80
VGS=4.5V, ID=3A
55
70
mΩ
VGS=2.5V, ID=2A
83
110
mΩ
gFS
Forward Transconductance
VDS=5V, ID=4A
8
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.8
1
V
IS
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
390
pF
54.5
pF
41
pF
3
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=4.5V, VDS=15V, ID=4A
4.34
nC
0.6
nC
Qgd
Gate Drain Charge
1.38
nC
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
3.3
ns
VGS=10V, VDS=15V, RL=3.75 ,
1
ns
RGEN=6
21.7
ns
tf
Turn-Off Fall Time
2.1
ns
trr
Body Diode Reverse Recovery Time
IF=4A, dI/dt=100A/ us
12
ns
Qrr
Body Diode Reverse Recovery Charge
IF=4A, dI/dt=100A/ us
6.3
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given
application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P2
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