AO3402 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

FEATURES
The AO3402 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with
gate voltages as low as 2.5V. This device is suitable for use
as a load switch applications.
Plastic-Encapsulate Mosfets
AO3402
N-Channel MOSFET
D
G
S
1.Gate
2.Source
3.Drain
SOT-23
Absolute Maximum Ratings (TA=25^oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current ^A
T_A=25°C
T =70°C
Pulsed Drain Current ^B
Power Dissipation ^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
ID
I_DM
P_D
T_J, T_STG
Maximum
30
±12
4
3.4
15
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ Max
70
90
100
125
63
80
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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