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AO3401 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor
◁
Plastic-Encapsulate Mosfets
AO3401
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Unit
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
TJ=55°C
-1
µA
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.7
-1 -1.3
V
ID(ON) On state drain current
VGS=-4.5V, VDS=-5V
-25
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
TJ=125°C
42
50
mΩ
75
53
65 mΩ
80 120 mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-5A
7
11
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.75 -1
V
IS
Maximum Body-Diode Continuous Current
ISM
Pulsed Body-Diode CurrentB
-2.2
A
-30
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
954
pF
115
pF
77
pF
6
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-4A
9.4
nC
2
nC
Qgd
Gate Drain Charge
3
nC
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
6.3
ns
VGS=-10V, VDS=-15V, RL=3.6Ω,
3.2
ns
RGEN=6Ω
38.2
ns
tf
Turn-Off Fall Time
12
ns
trr
Body Diode Reverse Recovery Time
IF=-4A, dI/dt=100A/µs
20.2
ns
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
11.2
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P2
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