AO3401 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

FEATURES
The AO3401 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V.
This device is suitable for use as a load switch
or in PWM applications.
D
G
S
Plastic-Encapsulate Mosfets
AO3401
P-Channel MOSFET
1.Gate
2.Source
3.Drain
SOT-23
Absolute Maximum Ratings (TA=25^oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current ^A
T_A=25°C
T =70°C
Pulsed Drain Current ^B
Power Dissipation ^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
I
I_DM
P_D
T_J, T_STG
Maximum
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ Max
65
90
85
125
43
60
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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