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| 9435 Datasheet, PDF (2/5 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – P-Channel Enhancement Mode Power MOSFET | |||
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Plastic-Encapsulate Mosfets
9435
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
IDSS
VDS=-24V,VGS=0V
-
-
-1
μA
IGSS
VGS=±20V,VDS=0V
-
- ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-5.1A
VGS=-4.5V, ID=-4.2A
VDS=-15V,ID=-4.5A
-1 -1.6 -3
V
-
48
55
mâ¦
-
73
105
mâ¦
4
7
-
S
Clss
- 1040 -
PF
VDS=-15V,VGS=0V,
Coss
- 420
-
PF
F=1.0MHz
Crss
- 150
-
PF
td(on)
-
15
-
nS
tr
VDD=-15V, ID=-1A,
-
13
-
nS
td(off)
VGS=-10V,RGEN=6â¦
-
58
-
nS
tf
21
-
nS
Qg
-
12
-
nC
Qgs
VDS=-15V,ID=-5.1A,VGS=-10V -
2.2
-
nC
Qgd
-
3
-
nC
VSD
VGS=0V,IS=-1.7A
-
-
-1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ⤠10 sec.
3. Pulse Test: Pulse Width ⤠300μs, Duty Cycle ⤠2%.
4. Guaranteed by design, not subject to production
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
Page:P5 -P2
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