9435 Datasheet, PDF (1/5 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – P-Channel Enhancement Mode Power MOSFET

Plastic-Encapsulate Mosfets
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The 9435 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
9435
GENERAL FEATURES
● V_DS = -30V,I_D = -5.1A
R_DS(ON) < 105mΩ @ V_GS=-4.5V
R_DS(ON) < 55mΩ @ V_GS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
SOP-8 top view
D
Application
●PWM applications
●Load switch
●Power management
G
S
pin Assignment ^{Schematic diagram}
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Limit
-30
±20
-5.1
-20
2
-55 To 150
Unit
V
V
A
A
W
℃
50
℃/W
Min Typ Max Unit
-30 -33
-
V
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
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