8205A Datasheet, PDF (2/2 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – Dual N-Channel Enhancement Mode MOSFET

Plastic-Encapsulate Mosfets
8205A ^{Electrical Characteristics (TA=25°C, unless otherwise noted)}
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gat e Thres hol d V ol t age
Drain-Source On-State Resistance *
On-S t at e Drai n Current *
Forward Transconductance *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Maximum Continuous Drain-Source Diode
Forward Current
Diode Forward Voltage *
* Pulse test; pulse width 300 s, duty cycle
Symbol
Testconditons
VDSS VGS = 0 V, ID = 250 A
VDS = 20V , VGS = 0V
IDSS
VDS = 20V , VGS = 0V , TJ =55
IGSS VDS = 0V , VGS = 8V
GS(thV) VDS = VGS , ID = 250uA
rDS(on) ^{VGS = 4.5V , DI = 5A}
VGS = 2.5V , ID = 4A
D( on)I VDS = 5V , VGS = 4.5V
gfs VDS = 5V , ID =3A
Ciss
Coss VDS = 10 V, VGS = 0 V,f = 1.0 MHz
Crss
Qg
Qgs VDS = 10V , VGS = 4.5V , ID = 3A
Qgd
td(on)
tr
td(off)
VDD = 10V
ID = 1A , VGS = 4.5V , RG = 6
tf
IS
VSD
2 %.
IS = 1.7 A, VGS = 0 V
Min Typ Max Unit
20
V
1
uA
5
50 nA
0. 5
1. 0 V
0.020 0.025
0.035 0.040
15
A
11
S
700
pF
175
pF
85
pF
7 10
1.2
nC
1.9
8 16
10 18
ns
18 29
5 10
1.3 A
0.65 1.2 V
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
Page:P2 -P2