8205A Datasheet, PDF (1/2 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – Dual N-Channel Enhancement Mode MOSFET

Dual N-Channel Enhancement Mode MOSFET
FEATURES
5A,20V.rDS(on) = 0.025 @ VGS = 4.5 V
rDS(on) = 0.040 @ VGS = 2.5 V.
Plastic-Encapsulate Mosfets
8205A
N -Channel MOSFET
TSSOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation TA = 25
TA = 70
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
Jumction temperature and Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
R JA
R JC
Tj.Tstg
Rating
20
8
5
20
2.0
1.6
78
40
-55 to +150
Unit
V
V
A
A
W
W
/W
/W
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
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