HLX6256 Datasheet, PDF (1/12 Pages) Honeywell Solid State Electronics Center – 32K x 8 STATIC RAM Low Power SOI

Military & Space Products
32K x 8 STATIC RAM—Low Power SOI
HLX6256
FEATURES
RADIATION
• Fabricated with RICMOS^™ IV Silicon on Insulator (SOI)
0.55 µm Low Power Process
• Total Dose Hardness through 1x10⁶ rad(SiO₂)
• Neutron Hardness through 1x10¹⁴ cm^-2
• Dynamic and Static Transient Upset Hardness
through 1x10⁹ rad(Si)/s
• Dose Rate Survivability through 1x10¹¹ rad(Si)/s
• Soft Error Rate of <1x10^-10 upsets/bit-day
• Latchup Free
OTHER
• Read/Write Cycle Times
≤ 17 ns (Typical)
≤ 25 ns (-55 to 125°C)
• Typical Operating Power <10 mW/MHz
• Asynchronous Operation
• JEDEC Standard Low Voltage
CMOS Compatible I/O
• Single 3.3 V ± 0.3V Power Supply
• Packaging Options
- 28-Lead Flat Pack (0.500 in. x 0.720 in.)
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)
- Various Multi-Chip Module (MCM) Configurations
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabri-
cated with Honeywell’s radiation hardened technology,
and is designed for use in low voltage systems operating in
radiation environments. The RAM operates over the full
military temperature range and requires only a single 3.3 V
± 0.3V power supply. The RAM is compatible with JEDEC
standard low voltage CMOS I/O. Power consumption is
typically less than 10 mW/MHz in operation, and less than
2 mW when de-selected. The RAM read operation is fully
asynchronous, with an associated typical access time of 14
ns at 3.3 V.
Honeywell’s enhanced SOI RICMOS^™IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and pro-
cess hardening techniques. The RICMOS^™ IV low power
process is a SIMOX CMOS technology with a 150 Å gate
oxide and a minimum drawn feature size of 0.7 µm (0.55 µm
effective gate length—L_eff). Additional features include
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process and a lightly doped drain (LDD) struc-
ture for improved short channel reliability. A 7 transistor
(7T) memory cell is used for superior single event upset
hardening, while three layer metal power bussing and the
low collection volume SIMOX substrate provide improved
dose rate hardening.