HMC863_10 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz

Outline Drawing
v00.1109
HMC863
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
3
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
Pad Descriptions
Pad Number
Function
1
RFIN
2
Vgg
Description
This pad is AC coupled
and matched to 50 Ohms.
Gate control for PA. Adjust Vgg to achieve recommended
bias current. External bypass caps 100pF, 0.1 µF and
4.7 µF are required.
Interface Schematic
3
Vdd
4
RFOUT
Drain bias for amplifier. External bypass caps
100pF, 0.1 µF and 4.7uF are required
This pad is AC coupled
and matched to 50 Ohms.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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