HMC863_10 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz

v00.1109
Typical Applications
The HMC863 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
HMC863
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Features
Saturated Output Power: +28 dBm @ 18% PAE
High Output IP3: +39 dBm
High Gain: 27 dB
DC Supply: +6V @ 375mA
50 Ohm Matched Input/Output
Die Size: 2.41 x 0.95 x 0.1 mm
Functional Diagram
General Description
The HMC863 is a three stage GaAs pHEMT MMIC
1/2 Watt Power Amplifier which operates between
24 and 29.5 GHz. The HMC863 provides 27 dB of
gain, and +27 dBm of saturated output power at 18%
PAE from a +6V supply. The RF I/Os are DC bloc-
ked and matched to 50 Ohms for ease of integration
into Multi-Chip-Modules (MCMs). All data is taken with
the chip in a 50 Ohm test fixture connected via 0.025
mm (1 mil) diameter wire bonds of length 0.31 mm
(12 mils).
Electrical Specifications, T_A = +25° C, Vdd = +6V, Idd = 375mA^[1]
Parameter
Min.
Typ.
Max.
Min.
Frequency Range
24 - 27
Gain
24
27
22
Gain Variation Over Temperature
0.0375
Input Return Loss
17
Output Return Loss
15
Output Power for 1 dB Compression (P1dB)
24
27
23
Saturated Output Power (Psat)
28
Output Third Order Intercept (IP3)^[2]
37
Total Supply Current (Idd)
375
[1] Adjust Vgg between -2 to 0V to achieve Idd= 375mA typical.
[2] Measurement taken at +6V @ 375mA, Pout / Tone = +16 dBm
Typ.
27 - 29.5
25
0.05
11
11
26
27
38
375
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]