HMC757 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz

v00.0409
HMC757
GaAs pHEMT MMIC 1/2 WATT
POWER AMPLIFIER, 16 - 24 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
2
Vgg
Description
This pad is AC coupled
and matched to 50 Ohms.
Gate control for PA. Adjust Vgg to achieve recommended
bias current. External bypass caps 100pF, 0.1uF and 4.7uF
are required.
Interface Schematic
3
Drain bias for amplifier. External bypass caps 100pF, 0.1uF
3
Vdd
and 4.7uF are required
4
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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