HMC757 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz

v00.0409
3
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Junction Temperature
Continuous Pdiss (T= 85 °C)
(derate 43 mW/°C above 85 °C)
Thermal Resistance
(junction to die bottom)
Storage Temperature
Operating Temperature
8V
+26 dBm
150 °C
2.8 W
23.4 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC757
GaAs pHEMT MMIC 1/2 WATT
POWER AMPLIFIER, 16 - 24 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
375
+7.0
395
+7.5
411
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 395 mA at +7V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3 - 138
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com