HMC756_10 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz

v02.0110
HMC756
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 16 - 24 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
2
Vgg
Description
This pad is AC coupled
and matched to 50 Ohm.
Gate control for PA. Adjust Vg to achieve recommended
bias current. External bypass caps 100pF, 0.1uF and 4.7uF
are required.
Interface Schematic
3
3, 5
Vdd1, Vdd2
4
Die Bottom
RFOUT
GND
Power Supply voltage for amplifier. External bypass
capacitors of 100pF and 0.1uF are required.
This pad is AC coupled
and matched to 50 Ohm.
Die bottom must be connected to RF/DC ground
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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