HMC756_10 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz

v02.0110
3
Absolute Maximum Ratings
Drain Bias Voltage (Vd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 86 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+8V
+26 dBm
150 °C
5.6 W
11.7 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC756
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 16 - 24 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
757
+7.0
790
+7.5
832
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 790mA at +7V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]