HMC754S8GE_10 Datasheet, PDF (6/10 Pages) Hittite Microwave Corporation – GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz

HMC754S8GE
v00.0409
GaAs HBT HIGH LINEARITY
PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 18.69 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+10 dBm
150 °C
1.21 W
53.5 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
ELECTROSTATIC SENSITIVE DEVICE
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OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC754S8GE RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Lead Finish
100% matte Sn
MSL Rating
MSL1 ^[2]
Package Marking ^[3]
HMC754
XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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