HMC741ST89E Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz

v00.0209
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 10.22 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HMB)
+5.5 Vdc
+10 dBm
150 °C
0.66 W
97.83 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
Outline Drawing
HMC741ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
ELECTROSTATIC SENSITIVE DEVICE
9
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
HMC741ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
MSL Rating
MSL1 ^[2]
Package Marking ^[1]
H741
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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