HMC740ST89E_10 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz

v01.0710
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 7.14 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HMB)
+5.5 Vdc
+15 dBm
150 °C
0.46 W
140 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
Outline Drawing
HMC740ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
ELECTROSTATIC SENSITIVE DEVICE
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OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC740ST89E RoHS-compliant Low Stress Injection Molded Plastic
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
Lead Finish
100% matte Sn
MSL Rating
MSL1 ^[2]
Package Marking ^[1]
H740
XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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