HMC740ST89E_10 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz

v01.0710
Typical Applications
8
The HMC740ST89E is ideal for:
• Cellular/3G & WiMAX/4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
HMC740ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Features
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +40 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V
Industry Standard SOT89 Package
Robust 1000V ESD, Class 1C
Stable Current Over Temperature
Active Bias Network
General Description
The HMC740ST89E is an InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering 0.05 to 3 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF or IF gain stage as
well as a PA or LO driver with up to +18 dBm output
power. The HMC740ST89E offers 15 dB of gain with
a +40 dBm output IP3 at 100 MHz, and can operate
directly from a +5V supply. The HMC740ST89E
exhibits excellent gain and output power stability over
temperature, while requiring a minimal number of
external bias components.
Electrical Specifications, Vcc = 5V, T_A = +25° C
Parameter
Min.
Typ.
Frequency Range
0.05 - 1
Gain
12
15
Gain Flatness
±0.1
Gain Variation over Temperature
0.003
Input Return Loss
18
Output Return Loss
18
Reverse Isolation
20
Output Power for 1 dB Compression (P1dB)
15.5
18
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
38
Noise Figure
3.5
Supply Current (Icq)
88
Max.
0.006
Min.
Typ.
Max.
Units
0.05 - 3
GHz
11
15
dB
±0.7
dB
0.003
0.006
dB/ °C
15
dB
18
dB
21
dB
14.5
17
dBm
32
dBm
3.5
dB
88
mA
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]