HMC659 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz

Pad Descriptions
Pad Number
Function
1
IN
2
Vgg2
3
ACG1
v00.0807
HMC659
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
3
Description
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
Interface Schematic
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. For nominal
operation +3V should be applied to Vgg2.
Low frequency termination. Attach bypass
capacitor per application circuit herein.
4
5
7
6
Die Bottom
ACG2
OUT & Vdd
ACG3
Vgg1
GND
Low frequency termination. Attach bypass
capacitor per application circuit herein.
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
Low frequency termination. Attach bypass
capacitor per application circuit herein.
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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