HMC659 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz

v00.0807
Power Compression @ 2 GHz
32
28
24
20
16
12
8
Pout
Gain
4
PAE
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT POWER (dBm)
Power Compression @ 15 GHz
32
28
24
20
16
12
8
Pout
Gain
4
PAE
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +12V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 41 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+9 Vdc
0 to -2 Vdc
+2V to +4V
+20 dBm
175 °C
3.69 W
24.4 °C/W
-65 to 150°C
-55 to 85 °C
HMC659
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
Power Compression @ 7 GHz
32
28
24
20
16
12
8
Pout
Gain
4
PAE
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT POWER (dBm)
3
Power Dissipation
10
9.5
9
8.5
8
7.5
7
6.5
Max Pdis @ 85C
6
2 GHz
5.5
12 GHz
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
299
300
301
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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