HMC608_07 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz

v01.0707
HMC608
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
2, 8 and
Die Bottom
GND
3
Vgg
Description
This pad is AC coupled and matched to 50 Ohms.
Die Bottom must be connected to RF/DC ground.
Gate control for amplifier. Adjust to achieve Id of 310mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF,
1000 pF and 2.2 μF are required.
High gain (connect to ground) / low gain mode pin control
4
Vpd
(open circuit). External bypass capacitors of 100 pF,
1000 pF and 2.2 μF are required.
5, 6, 7
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
9
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Interface Schematic
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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