HMC608_07 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz

v01.0707
Typical Applications
The HMC608 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• Military End-Use
Functional Diagram
HMC608
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Features
Output IP3: +33 dBm
Saturated Power: +27.5 dBm @ 23% PAE
Gain: 32 dB
Supply: +5V @ 310 mA
50 Ohm Matched Input/Output
Die Size: 2.1 x 1.2 x 0.1 mm
General Description
The HMC608 is a high dynamic range GaAs PHEMT
MMIC Medium Power Amplifier chip. The amplifier
has two modes of operation: high gain mode (Vpd pin
shorted to ground); and low gain mode (Vpd pin left
open). The electrical specifications in the table below
are shown for the amplifier operating in high gain
mode. Operating from 9.5 to 11.5 GHz, the amplifier
provides 32 dB of gain, +27.5 dBm of saturated power
and 23% PAE from a +5V supply voltage. Noise
figure is 5.5 dB while output IP3 is +33 dBm. The RF
I/Os are DC blocked and matched to 50 Ohms for
ease of use.
3 - 106
Electrical Specifications, T_A = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA ^[1], Vpd = GND^[2]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
Gain ^[3]
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
9.5 - 11.5
GHz
28
32
dB
0.02
0.03
dB/ °C
12
dB
20
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) ^[3]
[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical.
[2] Vpd= ground for high gain mode, Vpd = open for low gain mode.
[3] In low gain mode, typical gain is 22 dB and typical current is 67 mA.
23
27
dBm
27.5
dBm
33
dBm
5.5
dB
310
350
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com