HMC590 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz

Pad Descriptions
Pad Number
Function
1
RFIN
v01.0107
HMC590
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Description
This pad is AC coupled and
matched to 50 Ohms.
Interface Schematic
Gate control for amplifier. Adjust to achieve Idd of 820 mA.
2
Vgg
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.1 μF are required.
3-5
Vdd 1-3
6
Die Bottom
RFOUT
GND
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
This pad is AC coupled and
matched to 50 Ohms.
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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