HMC590 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz

v01.0107
1
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFin)(Vdd = +7.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 67 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+8 Vdc
-2.0 to 0 Vdc
+12 dBm
175 °C
6.0 W
14.9 °C/W
-65 to +150 °C
-55 to +85 °C
HMC590
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
824
+7.0
820
+7.5
815
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 820 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
1 - 218
Die Packaging Information ^[1]
Standard
Alternate
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com