HMC559 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz

v01.0406
HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
Pad Descriptions
Pad Number
Function
1
IN
2
Vgg2
Description
This pad is DC coupled and matched
to 50 Ohms from DC - 20GHz.
Blocking capacitor is required.
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. For nominal
operation +4V should be applied to Vgg2.
3
ACG2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
RF output for amplifier. Connect DC bias (Vdd) network to
4
OUT & Vdd
provide drain current (Idd). See application circuit herein.
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
5
Vgg1
follow “MMIC Amplifier Biasing Procedure”
application note.
6
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
1
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