HMC559 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz

v01.0406
Power Compression @ 2 GHz
32
28
Pout
Gain
24
PAE
20
16
12
8
4
0
0 2 4 6 8 10 12 14 16 18 20 22
INPUT POWER (dBm)
Power Compression @ 20 GHz
32
28
24
20
16
12
Pout
Gain
8
PAE
4
0
0
2
4
6
8 10 12 14 16
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFin)(Vdd = +10 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 55 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+11 Vdc
-2.0 to 0 Vdc
+3V to +5V
+30 dBm
175 °C
5W
18 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
Power Compression @ 10 GHz
32
28
Pout
Gain
24
PAE
20
16
12
8
4
0
0 2 4 6 8 10 12 14 16 18 20 22
INPUT POWER (dBm)
1
Power Dissipation
5.5
Max Pdiss @ +85C
5
4.5
4
2 GHz
3.5
10 GHz
3
2.5
-5
0
5
10
15
20
25
30
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Vdd (V)
+9.5
+10
+10.5
Idd (mA)
399
400
401
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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