HMC484MS8G Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz

v01.0404
MICROWAVE CORPORATION
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH
DC - 3.0 GHz
Typical Application Circuit
Notes:
1. Set logic gate and switch Vdd = +3V to +10V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +10 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
A
See truth table and control voltage table.
2
3, 5, 8
B
RFC, RF1, RF2
See truth table and control voltage table.
This pin is DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
4
Vdd
Supply Voltage
14
6, 7
GND
Package bottom must also
be connected to PCB RF ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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